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                BAS85 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved. Product data sheet Rev. 6 — 10 September 2010 3 of 10 NXP Semiconductors BAS85 Schottky barrier diode 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics [1] Pulse test: tp ≤ 300 μs; δ≤0.02. Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 320 K/W Table 7. Characteristics Tamb =25°C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 0.1 mA - - 240 mV IF = 1 mA - - 320 mV IF = 10 mA - - 400 mV IF = 30 mA - - 500 mV IF = 100 mA - - 800 mV IR reverse current VR =25V [1] --2.3μA Cd diode capacitance VR =1V; f=1MHz --10pF |